IGBT (Insulated Gate Bipolar Transistor) insulated gate bipolar transistor is an ordinary VDMOS based transistor that adds P injection to the back of the wafer and utilizes conductivity modulation effect to increase the number of carriers in the drift region, thereby significantly reducing the device's conduction resistance and chip area. IGB T devices have high current density and low power consumption, which can significantly improve energy efficiency and reduce heat dissipation requirements. They are suitable for high-power scenarios such as high voltage and high current.

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