The SGT MOSFET (Shield Gate Trench MOSFET) shield gate power device utilizes the charge balance principle to introduce horizontal depletion on the basis of the vertical depletion of the PN junction in traditional groove MOSFET devices. With the same voltage withstand BVDSS, a more heavily doped epitaxial layer can be used, significantly reducing the specific conduction resistance Rsp and chip area. At the same time, Miller's capacitance is significantly reduced, and the switching speed is significantly increased, thereby reducing switching losses, which has significant advantages in the application of switch mode power supplies.

Hotline:13924597164

Download

Feedback