The Super Junction MOSFET (Super Junction MOSFET) super junction power device uses N-type and P-type periodic arrangement junction voltage withstand layers, which breaks through the theoretical limits of traditional silicon based MOS devices. Compared to the 2.5th power relationship of traditional planar VDMOS devices Rdson * A-BV, the conduction resistance of SJ MOSFET reaches an approximate linear relationship with breakdown voltage. Therefore, the conduction resistance RDS (on), peak capacitance, output charge, and chip size J of SJ MOSFET have been significantly reduced, making it a highly efficient typical power device in the field of high-voltage switch converters.

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